5

6

7

8

1

2

3

4

Top View

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

NG4D5678S123

Features

Type

VDS

RDS(on) max.

ID

STL260N4F7

40 V

1.1 mΩ

120 A

•

Among the lowest RDS(on) on the market

•

Excellent FoM (figure of merit)

•

Low Crss/Ciss ratio for EMI immunity

•

High avalanche ruggedness

Applications

•

Switching applications

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced

trench gate structure that results in very low on-state resistance, while also reducing

internal capacitance and gate charge for faster and more efficient switching.

Product status link

STL260N4F7

Product summary

Order code

STL260N4F7

Marking

260N4F7

Package

PowerFLAT™ 5x6

Packing

Tape and reel

N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a

PowerFLAT 5x6 package

STL260N4F7

Datasheet

DS11198 - Rev 5 - April 2019

For further information contact your local STMicroelectronics sales office.

www.st.com