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STL260N4F7 Datasheet(PDF) 6 Page - STMicroelectronics |
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STL260N4F7 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 16 page Figure 7. Capacitance variations GIPG101215OD48A1LCVR 104 103 102 101 0 10 20 30 40 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Normalized on-resistance vs temperature GIPG101215OD48A1LRON 1.6 1.4 1.2 1.0 0.8 0.6 -75 -25 25 75 125 R DS(on) (norm.) T j (°C) VGS = 10 V Figure 9. Normalized V(BR)DSS vs temperature GADG030420191037BDV 1.06 1.04 1.02 1.00 0.98 0.96 0.94 -75 -25 25 75 125 175 V(BR)DSS (norm.) ID = 2 mA Tj (°C) Figure 10. Normalized gate threshold voltage vs temperature GIPG101215OD48A1LVTH 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -75 -25 25 75 125 175 VGS(th) (norm.) ID = 250 μA TJ (°C) Figure 11. Source-drain diode forward characteristics GIPG101215OD48A1LSDF 0.9 0.8 0.7 0.6 0.5 0.4 0 10 20 30 40 50 V SD (V) I SD (A) T j = -55 °C T j = 25 °C T j = 175 °C STL260N4F7 Electrical characteristics (curves) DS11198 - Rev 5 page 6/16 |
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