STF260N4F7 datasheet(4/11 Pages) STMICROELECTRONICS

Part #	STF260N4F7

Description	N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STF260N4F7

4/11

DocID028478 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Uni

t

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 250 μA

40

V

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 40 V

1

µA

VGS = 0 V, VDS = 40 V

TC = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = + 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on- resistance

VGS = 10 V, ID = 60 A

1.95

2.5

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

-

5640

-

pF

Coss

Output capacitance

-

2370

-

pF

Crss

Reverse transfer

capacitance

-

34

-

pF

Qg

Total gate charge

VDD = 20 V, ID = 120 A,

VGS = 10 V

(see Figure 3: "Test circuit for gate

charge behavior")

-

67

-

nC

Qgs

Gate-source charge

-

31

-

nC

Qgd

Gate-drain charge

-

10

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 20 V, ID = 60 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 2: "Test circuit for resistive load

switching times" and Figure 7: "Switching

time waveform"

-

30

-

ns

tr

Rise time

-

21

-

ns

td(off)

Turn-off

delay time

-

42

-

ns

tf

Fall time

-

13

-

ns

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