STF260N4F7 datasheet(5/11 Pages) STMICROELECTRONICS

Part #	STF260N4F7

Description	N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP package

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STF260N4F7

Electrical characteristics

DocID028478 Rev 1

5/11

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on

voltage

VGS = 0 V, ISD = 120 A

-

1.1

V

trr

Reverse

recovery time

ISD = 120 A, di/dt = 100 A/µs

VDD = 32 V (see Figure 4: "Test circuit for

inductive load switching and diode

recovery times")

-

68

ns

Qrr

Reverse

recovery

charge

-

98

nC

IRRM

Reverse

recovery

current

-

3

A

Notes:

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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