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EN29LV010 Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN29LV010 Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
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1 / 35 page  This Data Sheet may be revised by subsequent versions ©2003 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 1 EN29LV010 Rev. B, Issue Date: 2004/01/05 da0. FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors. • High performance - Full voltage range: access times as fast as 55 ns - Regulated voltage range: access times as fast as 45ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Flexible Sector Architecture: - Eight 16 Kbyte sectors - Supports full chip erase - Individual sector erase supported - Sector protection and unprotection: Hardware locking of sectors to prevent program or erase operations within individual sectors • High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Single Sector and Chip Erase • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode • triple-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 2.5V • >100K program/erase endurance cycle • Package options - - 8mm x 20mm 32-pin TSOP (Type 1) - 8mm x 14mm 32-pin TSOP (Type 1) - 32-pin PLCC • Commercial and industrial Temperature Range GENERAL DESCRIPTION The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 131,072 bytes. Any byte can be programmed typically in 8µs. The EN29LV010 features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV010 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. EN29LV010 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
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