EN29LV010 datasheet(7/35 Pages) EON

Part #	EN29LV010

Description	1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Download	35 Pages

Scroll/Zoom	100%

Manufacturer	EON [Eon Silicon Solution Inc.]

Direct Link	http://www.essi.com.tw

Logo

7 / 35 page

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

7

EN29LV010

Rev. B, Issue Date: 2004/01/05

whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens

first. The system is not required to provide further controls or timings. The device automatically

provides internally generated program / erase pulses and verifies the programmed /erased cells’

margin. The host system can detect completion of a program or erase operation by reading the

DQ[7] (Data# Polling) and DQ[6] (Toggle) status bits.

The ‘Command Definitions’ section of this document provides details on the specific device

commands implemented in the EN29LV010.

Sector Protection/Unprotection

The hardware sector protection feature disables both program and erase operations in any sector. The

hardware sector unprotection feature re-enables both program and erase operations in previously

protected sectors.

Sector protection/unprotection is intended only for programming equipment. This method requires

VID be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This

method is described in a separate document called EN29LV010 Supplement, which can be obtained

by contacting a representative of Eon Silicon Solution, Inc.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device energy consumption. The device automatically

enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is

independent of the CE#, WE# and OE# control signals. Standard address access timings provide

new data when addresses are changed. While in sleep mode, output is latched and always

available to the system. ICC4 in the DC Characteristics table represents the automatic sleep more

current specification.

Similar Part No. - EN29LV010

Manufacturer	Part #	Datasheet	Description
Eon Silicon Solution In...	EN29LV040A	257Kb / 35P	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
	EN29LV040A	262Kb / 33P	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
	EN29LV040A-45RJCP	262Kb / 33P	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
	EN29LV040A-45RJIP	262Kb / 33P	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
	EN29LV040A-45RPCP	262Kb / 33P	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Manufacturer	Part #	Datasheet	Description
Eon Silicon Solution In...	EN39LV010	399Kb / 36P	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
Eon Silicon Solution In...	EN39LV010	1Mb / 36P	1 Megabit (128K x 8-bit ) 4 Kbyte Uniform Sector, CMOS 3.0 Volt-only Flash Memory
Advanced Micro Devices	AM29LV081B	952Kb / 40P	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
	AM29LV081	439Kb / 35P	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
	AM29LV010B	66Kb / 7P	1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
	AM29LV010B	942Kb / 36P	1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Eon Silicon Solution In...	EN29LV040A	262Kb / 33P	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
Eon Silicon Solution In...	EN29LV040A	257Kb / 35P	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
AMIC Technology	A29010B	351Kb / 30P	128K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMIC Technology	A29010V-70F	347Kb / 29P	128K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory