3236 Scott Boulevard

Santa Clara, California 95054

Phone: (408) 986-5060

Fax: (408) 986-5095

CFK2062-P5

Features

t High Gain

t +30 dBm Power Output

t Proprietary Power FET Process

t >40% Linear Power Added Efficiency

t Surface Mount SO-8 Power Package

Applications

t ISM Band Base Stations and Terminals

t RF ID/POS Base Stations

t Wireless Local Loop

Description

The CFK2062-P5 is a high-gain FET intended for dri-

ver amplifier applications in high-power systems, and output

stage usage in medium power applications at power levels up to

+30 dBm. The device is easily matched and provides excellent

linearity at 1 Watt. Manufactured in Celeritek’s proprietary

power FET process, this device is assembled in an industry

standard surface mount SO-8 power package that is compatible

with high volume, automated board assembly techniques.

2.3 to 2.5 GHz

+30 dBm Power GaAs FET

Product Specifications

July 1997

(1 of 4)

1

3

4

7

8

6

5

2

G

G

D

D

Back Plane

is Source

GND

GND

GND

GND

Package Diagram

Absolute Maximum Ratings

Parameter

Symbol

Rating

Drain-Source Voltage

VDS

10V (3)

Gate-Source Voltage

VGS

-5V

Drain Current

IDS

Idss

Continuous Dissipation

PT

6W

Channel Temperature

TCH

175°C

Storage Temperature

TSTG

-65°C to +175°C

SO-8 Power Package Physical Dimensions

Notes:

1. Sum to two tones with 1 MHz spacing = 25 dBm.

2. See thermal considerations information on page 4.

3. Maximum potential difference across the device (Vd + Vg) cannot

exceed 12V.

Parameters

Conditions

Min

Typ

Max

Units

Vd = 8V, Id = 400 mA (Quiescent)

P-1dB

30.0 31.0

—

dBm

SSG

12.0 13.0

—

dB

3rd Order

Products (1)

—

30

—

dBc

Efficiency

@ P1dB

—

40

—

%

Vd = 5V, Id = 600 mA (Quiescent)

P-1dB

—

30.5

—

dBm

SSG

—

12.0

—

dB

guaranteed at room temperature in Celeritek test fixture at 2.45 GHz.

Parameters

Conditions

Min

Typ

Max

Units

gm

Vds = 2.0V, Vgs = 0V

—

650

—

mS

Idss

Vds = 2.0V, Vgs = 0V

—

1.4

—

A

Vp

Vds = 3.0V, Ids = 25 mA

—

-1.8

Volts

BVGD

Igd = 2.5 mA

15

17

—

Volts

Θ

JL (2)

@150°C TCH

—

12

—

°C/W