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IRIS-W6756 Datasheet(PDF) 1 Page - International Rectifier

Part # IRIS-W6756
Description  INTEGRATED SWITCHER
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRIS-W6756 Datasheet(HTML) 1 Page - International Rectifier

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IRIS-W6756
Features
• 6-pin SIP type full molded package, optimum IC for low-height SMPS,
distance between high and low voltage pins is 1.8 mm with pin elimination.
• Oscillator is provided on the monolithic control with adopting On-Chip
Trimming Technology
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
•Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge
absorption
circuit since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PWM mode (≒22 kHz)
• UVLO Burst Standby
• Two operational modes by auto switching functions according to load
For middle~heavy load operation : QR mode
For light~middle load operation : 1 Bottom Skip mode
• Various kinds of protection functions
Pulse-by-Pulse Overcurrent Protection (OCP)
Overvoltage Protection with Latch mode (OVP)
Overload Protection with Latch mode (OLP)
The maximum limit of on-time
Package Outline
TO-220 Fullpack (7 Lead modified)
Description
IRIS-W6756 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM)
fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and
standardizing of a power supply system reducing external component count and simplifying the circuit design.
Typical Connection Diagram
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
Pout(W)
Note 1
230±15%
240
85 to 264
140
IRIS-W6756
650
0.73Ω
Key Specifications
Note 1:
The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to
140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that
of the above.
INTEGRATED SWITCHER
D
DD
D
S
SS
S/
//
/G
GG
GN
NN
ND
DD
D
F
FF
FB
BB
B
O
OO
OC
CC
CP
PP
P/
//
/B
BB
BD
DD
D
S
SS
SS
SS
S/
//
/O
OO
OL
LL
LP
PP
P
V
VV
Vc
cc
cc
cc
c
I
II
IR
RR
RI
II
IS
SS
S-
--
-W
WW
W6
66
67
77
756
56
56
56
Data Sheet No. PD 96953A


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