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IRIS-W6756 Datasheet(PDF) 5 Page - International Rectifier |
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IRIS-W6756 Datasheet(HTML) 5 Page - International Rectifier |
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5 / 8 page  www.irf.com IRIS-W6756 Between channel and internal frame ℃ /W 1.5 - - - Thermal resistance θ ch-F - nSec 400 - - 1 - 3 Switching time tf ID=2.2A Ω 0.73 - - 1 - 3 On-resistance R DS(ON) VDS=650V µA 300 - - 1 - 3 Drain leakage current I DSS ID=300µA V - - 650 1 - 3 Drain-to-Source breakdown voltage V DSS MAX TYP MIN Note Units Ratings Terminals Definition Symbol Electrical characteristics for MOSFET (Ta=25 deg C) IRIS-W6756 A.S.O. temperature derating coefficient curve 0 20 40 60 80 100 0 20406080 100 120 Internal frame temperature TF [ ℃ ] IRIS-W6756 MOS FET A.S.O. curve 0.1 1 10 100 10 100 1000 Drain-to-Source Voltage VDS[V] Drain current limit by ON resistance 0.1ms 1ms ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. Ta=25ºC Single Pulse |
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