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FGA15N120ANTD Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGA15N120ANTD Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  2 www.fairchildsemi.com FGA15N120ANTD Rev. A Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGA15N120ANTD FGA15N120ANTD TO-3P -- -- 30 Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 15mA, VCE = VGE 4.5 6.5 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 15A, VGE = 15V -- 1.9 2.4 V IC = 15A, VGE = 15V, TC = 125°C -- 2.2 -- V IC = 30A, VGE = 15V -- 2.3 -- V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 2650 -- pF Coes Output Capacitance -- 143 -- pF Cres Reverse Transfer Capacitance -- 96 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -- 15 -- ns tr Rise Time -- 20 -- ns td(off) Turn-Off Delay Time -- 160 -- ns tf Fall Time -- 100 180 ns Eon Turn-On Switching Loss -- 3 4.5 mJ Eoff Turn-Off Switching Loss -- 0.6 0.9 mJ Ets Total Switching Loss -- 3.6 5.4 mJ td(on) Turn-On Delay Time VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C -- 15 -- ns tr Rise Time -- 20 -- ns td(off) Turn-Off Delay Time -- 170 -- ns tf Fall Time -- 150 -- ns Eon Turn-On Switching Loss -- 3.2 4.8 mJ Eoff Turn-Off Switching Loss -- 0.8 1.2 mJ Ets Total Switching Loss -- 4.0 6.0 mJ Qg Total Gate Charge VCE = 600 V, IC = 15A, VGE = 15V -- 120 180 nC Qge Gate-Emitter Charge -- 16 22 nC Qgc Gate-Collector Charge -- 50 65 nC |
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