tm

©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGA15N120ANTD Rev. A

May 2006

FGA15N120ANTD

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Extremely enhanced avalanche capability

Description

Using Fairchild's proprietary trench design and advanced NPT

technology, the 1200V NPT IGBT offers superior conduction

and switching performances, high avalanche ruggedness and

easy parallel operation.

This device is well suited for the resonant or soft switching appli-

cation such as induction heating, microwave oven, etc.

G

C

E

G

C

E

G C E

TO-3P

Absolute Maximum Ratings

Symbol

Description

FGA15N120ANTD

Units

Collector-Emitter Voltage

1200

V

Gate-Emitter Voltage

± 20

V

Collector Current

30

A

Collector Current

15

A

45

A

Diode Continuous Forward Current

15

A

Diode Maximum Forward Current

45

A

Maximum Power Dissipation

186

W

Maximum Power Dissipation

74

W

Operating Junction Temperature

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case for IGBT

--

0.67

°C/W

Thermal Resistance, Junction-to-Case for Diode

--

2.88

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W

Notes:

(1) Repetitive rating: Pulse width limited by max. junction temperature