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2SA2182 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA2182 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SA2182 2006-11-13 2 Electrical Characteristics (Tc = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = − 230 V, IE = 0 ⎯ ⎯ − 100 nA Emitter cut-off current IEBO VEB = − 5 V, IC = 0 ⎯ ⎯ − 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = − 10 mA, IB = 0 − 230 ⎯ ⎯ V DC current gain hFE VCE = − 5 V, IC = − 0.1 A 100 ⎯ 320 Collector-emitter saturation voltage VCE (sat) IC = − 500 mA, IB = − 50 mA ⎯ ⎯ − 0.5 V Base-emitter voltage VBE VCE = − 5 V, IC = − 500 mA ⎯ ⎯ − 1.0 V Transition frequency fT VCE = − 10 V, IC = − 100 mA ⎯ 80 ⎯ MHZ Collector output capacitance Cob VCB = − 10 V, IE = 0, f = 1MHZ ⎯ 22.5 ⎯ pF Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2SA2182 Part No. (or abbreviation code) |
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