2SA2182

2006-11-13

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2182

Power Amplifier Applications

Driver Stage Amplifier Applications

・

High transition frequency: fT = 80 MHz (typ.)

Absolute Maximum Ratings (Tc = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

− 230

V

Collector-emitter voltage

VCEO

− 230

V

Emitter-base voltage

VEBO

− 5

V

DC

IC

− 1.0

A

Collector current

pulse

ICP

− 2.0

A

Base current

IB

− 100

mA

Ta

= 25°C

2

W

Collector power dissipation

Tc

= 25°C

PC

20

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

− 55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10U1A

Weight: 1.7 g (typ.)

1 : BASE

2 : COLLECTOR

3 : EMITTER