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2SA2182 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SA2182 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page  2SA2182 2006-11-13 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE VCE (sat) – IC Collector current −IC (A) hFE – IC Collector current −IC (A) 0 0 −1 −0.5 −0.2 −0.4 −0.6 −0.8 −1.2 −1 −1.4 10 0.001 0.01 0.1 1 Collector current −IC (A) fT – IC Common emitter Ta=25℃ VCE= − 10V 1000 0 0 −1 −0.2 −0.4 −0.6 −10 −0.8 −2 −4 −6 −8 10 0.001 0.01 0.1 1 1 0.001 1 0.01 0.1 10 100 −2 −1.5 0 0 40 80 120 160 4 8 16 20 24 Ambient temperature Ta (°C) PC – Ta 12 ① Tc=Ta Infinite heat sink ② No heat sink Common emitter VCE = − 5 V Single non-repetitive pulse Tc = 100°C −25 25 1 1000 10 100 Common emitter VCE = − 5 V Single non-repetitive pulse Tc = 100°C −25°C 25°C 0.01 1 0.1 10 Common emitter VCE = − 5 V Single non-repetitive pulse IB = −1 mA −3 mA −20mA −10 mA −5 mA −4 mA −2 mA Common emitter β =10 Single non-repetitive pulse Tc = 100°C −25°C 25°C ① ② |
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