1

Composite Transistors

XN4212

Silicon NPN epitaxial planer transistor

For switching/digital circuits

q

Two elements incorporated into one package.

(Transistors with built-in resistor)

q

Reduction of the mounting area and assembly cost by one half.

q

UN1212

× 2 elements

1 : Collector (Tr1)

4 : Collector (Tr2)

2 : Base (Tr2)

5 : Base (Tr1)

3 : Emitter (Tr2)

6 : Emitter (Tr1)

EIAJ : SC–74

Mini Type Package (6–pin)

Unit: mm

Marking Symbol:

8R

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

50

V

Collector to emitter voltage

50

V

Collector current

100

mA

Total power dissipation

300

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

Rating

of

element

Overall

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector to base voltage

50

V

Collector to emitter voltage

50

V

Collector cutoff current

0.1

µA

0.5

µA

Emitter cutoff current

0.2

mA

Forward current transfer ratio

60

Collector to emitter saturation voltage

0.25

V

Output voltage high level

4.9

V

Output voltage low level

0.2

V

Transition frequency

150

MHz

Input resistance

–30%

22

+30%

k

Ω

Resistance ratio

0.8

1.0

1.2

2.8

+0.2

–0.3

1.5

0.65

±0.15

0.65

±0.15

1

6

5

4

3

2

+0.25

–0.05

0.4

±0.2

0.1 to 0.3

6

Tr2

Tr1

5

43

2

1