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UN4216 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UN4216 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 13 page  2 Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA UN4211 0.5 UN4212/4214/421E/421D 0.2 UN4213 0.1 UN4215/4216/4217/4210 IEBO VEB = 6V, IC = 0 0.01 mA UN421F/421K 1.0 UN4219 1.5 UN4218/421L 2.0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V UN4211 35 UN4212/421E 60 UN4213/4214 hFE VCE = 10V, IC = 5mA 80 UN4215*/4216*/4217*/4210* 160 460 UN421F/421D/4219 30 UN4218/421K/421L 20 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 UN4213/421K VOL VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 V UN421D VCC = 5V, VB = 10V, RL = 1kΩ 0.2 UN421E VCC = 5V, VB = 6V, RL = 1kΩ 0.2 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz UN4211/4214/4215/421K 10 UN4212/4217 22 UN4213/421D/421E/4210 R1 (–30%) 47 (+30%) k Ω UN4216/421F/421L 4.7 UN4218 0.51 UN4219 1 UN4211/4212/4213/421L 0.8 1.0 1.2 UN4214 0.17 0.21 0.25 UN4218/4219 0.08 0.1 0.12 UN421D R1/R2 3.7 4.7 5.7 UN421E 1.7 2.14 2.6 UN421F 0.37 0.47 0.57 UN421K 1.7 2.13 2.6 Emitter cutoff current Forward current transfer ratio Input resis- tance Resis- tance ratio * hFE rank classification (UN4215/4216/4217/4210) Rank Q R S hFE 160 to 260 210 to 340 290 to 460 |
Similar Part No. - UN4216 |
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Similar Description - UN4216 |
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