FMM5805X

17.5-20GHz Power Amplifier MMIC

4

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.

San Jose, CA 95131-1138, U.S.A.

Phone: (408) 232-9500

FAX: (408) 428-9111

www.fcsi.fujitsu.com

FUJITSU MICROELECTRONICS, LTD.

Compound Semiconductor Division

Network House

Norreys Drive

Maidenhead, Berkshire SL6 4FJ

Phone:+44 (0)1628 504800

FAX:+44 (0)1628 504888

Fujitsu Limited reserves the right to change products and specifications without notice.

The information does not convey any license under rights of Fujitsu Limited or others.

© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.

Printed in U.S.A. FCSI0699M200

CHIP OUTLINE

Unit: µm

0

3470

Chip Size: 3.47±30µm x 2.63±30µm

VGG1, VGG2: One bonding is available

Chip Thickness: 70±20µm

Pad Dimensions: 1. DC 80µm x 80µm

2. RF 120µm x 80µm

1115

2250

2520

2630

0

0

RFin

RFout

0

VDD5

2940

VGG2

2210

110

VDD3

VGG2

110

170

VGG1

110

VDD1 VGG1

680

VDD2

1160

VGG1

2210

1315

2395

2460

235

VDD4

3360

2940

710

1160

710

Fujitsu Compound Semiconductor Products contain gallium arsenide

(GaAs) which can be hazardous to the human body and the environment.

For safety, observe the following procedures:

CAUTION

• Do not ingest.

• Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products

are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods

specified by applicable hazardous waste procedures.