Item

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Noise Figure

Associated Gain

Noise Figure

Associated Gain

Symbol

IDSS

10

30

60

35

50

-

-0.1

-

-0.7

-1.5

0.45

0.50

-3.0

--

11.0

13.0

-

11.0

13.0

-

-

0.55

0.60

VDS = 2V, IDS = 1mA

VDS = 2V, IDS = 10mA

VDS = 2V, VGS = 0V

IGS = -10µA

VDS = 2V

IDS = 10mA

f = 12GHz

mA

mS

V

dB

dB

dB

dB

V

gm

FHX13X

FHX14X

Vp

VGSO

NF

Gas

NF

Gas

Test Conditions

Unit

Limit

Typ.

Max.

Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25

°C)

Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)

Channel to Case

-

220

300

°C/W

Thermal Resistance

Rth

The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.

1

Edition 1.2

July 1999

FHX13X, FHX14X

GaAs FET & HEMT Chips

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

VDS

VGS

3.5

-3.0

180

-65 to +175

175

V

V

mW

°C

°C

Pt*

Tstg

Tch

Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25

°C)

*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDS) should not exceed 2 volts.

2. The forward and reverse gate currents should not exceed 0.2 and -0.05mA respectively with

gate resistance of 4000

Ω.

3. The operating channel temperature (Tch) should not exceed 80°C.

FEATURES

• Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)

• High Associated Gain: 13.0dB (Typ.)@f=12GHz

• Lg

≤ 0.15µm, Wg = 200µm

• Gold Gate Metallization for High Reliability

DESCRIPTION

The FHX13X, FHX14X are Super High Electron Mobility Transistor

(SuperHEMT

high gain amplifiers in the 2-18GHz frequency range. The devices

are well suited for telecommunication, DBS, TVRO, VSAT or other

low noise applications.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.