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FHX13X Datasheet(PDF) 2 Page - Eudyna Devices Inc |
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FHX13X Datasheet(HTML) 2 Page - Eudyna Devices Inc |
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2 / 4 page  2 FHX13X, FHX14X GaAs FET & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE OUTPUT POWER vs. INPUT POWER NOISE PARAMETERS VDS=2V, IDS=10mA 3.0 f=12GHz VDS=2V Freq. (GHz) Γopt (MAG) (ANG) NFmin (dB) Rn/50 f=12GHz VDS=2V IDS=10mA Gas NF 2.5 2.0 1.5 1.0 0.5 14 13 12 11 10 9 10 20 30 -10 10 -5 0 5 12 3 4 Drain Current (mA) Input Power (dBm) Drain-Source Voltage (V) 40 30 20 0 10 10 15 20 5 0 2 4 6 8 10 12 14 16 18 20 22 24 0.92 0.84 0.77 0.71 0.66 0.61 0.58 0.56 0.54 0.52 0.50 0.46 13 25 38 51 65 79 93 108 122 136 150 162 0.28 0.30 0.32 0.34 0.39 0.45 0.56 0.68 0.86 1.03 1.22 1.43 0.65 0.54 0.41 0.31 0.23 0.17 0.12 0.09 0.07 0.07 0.07 0.07 VGS =0V -0.2V -0.4V -0.6V -0.8V POWER DERATING CURVE 50 100 150 200 Ambient Temperature ( °C) 200 150 100 0 0 50 Ga (max) & |S21|2 vs. FREQUENCY VDS=2V IDS=10mA Ga (max) |S21|2 15 20 25 10 5 0 46 8 1012 20 Frequency (GHz) |
Similar Part No. - FHX13X |
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Similar Description - FHX13X |
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