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SI8440 Datasheet(PDF) 10 Page - Silicon Laboratories |
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SI8440 Datasheet(HTML) 10 Page - Silicon Laboratories |
10 / 24 page Si8440/1/2 10 Rev. 0.3 Table 4. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Ambient Operating Temperature* TA 100 Mbps, 15 pF, 5 V –40 25 125 ºC 150 Mbps, 15 pF, 5 V 0 25 100 ºC Supply Voltage VDD1 2.375 — 5.5 V VDD2 2.375 — 5.5 V *Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply voltage. Table 5. Absolute Maximum Ratings Parameter Symbol Min Typ Max Unit Storage Temperature TSTG –65 — 150 ºC Ambient Temperature Under Bias TA –40 — 125 ºC Supply Voltage VDD1, VDD2 –0.5 — 6 V Input Voltage VI –0.5 — VDD + 0.5 V Output Voltage VO –0.5 — VDD + 0.5 V Output Current Drive Channel LO —— 10 mA Lead Solder Temperature (10s) — — 260 ºC Maximum Isolation Voltage — — 4000 VDC Note: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 6. Package Characteristics Parameter Symbol Test Condition Min Typ Max Unit Resistance (Input-Output)1 RIO —1012 — Ω Capacitance (Input-Output)1 CIO f=1MHz — 1.4 — pF Input Capacitance2 CI —4.0 — pF IC Junction-to-Case Thermal Resistance, Side 1 θJCI Thermocouple located at center of package underside —33 — ºC/W IC Junction-to-Case Thermal Resistance, Side 2 θJCO —28 — ºC/W Notes: 1. Device considered a 2-terminal device; Pins 1– 8 shorted together and pins 9–16 shorted together. 2. Input capacitance is from any input data pin to ground. |
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