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2SA733 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2SA733 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA733 Rev. A0 2 Electrical Characteristics T A=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% hFE Classification Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics VCBO Collector-Base Breakdown Voltage IC = -10μA, IE = 0 -60 V VCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -50 V VEBO Emitter-Base Breakdown Voltage IE = -10μA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -60V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -100 nA On Characteristics hFE DC Current Gain VCE = -6V, IC = -1mA 90 600 VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA -15 -300 mV VBE(on) Base-Emitter On Voltage VCE = -6V, IC = -1mA -580 -680 mV Small Signal Characteristics fT Current Gain Bandwidth Product VCE = -6V, IC = -10mA 50 MHz Cob Output Capacitance VCB = -10V, IE = 0 f = 1.0MHz 6pF NF Noise Figure VCE = -6V, IC = -0.3mA RG = 10kΩ, f = 100Hz 20 dB Classification R Q P K hFE 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 |
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