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UC2843BDR2G Datasheet(PDF) 2 Page - ON Semiconductor |
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UC2843BDR2G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 25 page UC3842B, UC3843B, UC2842B, UC2843B www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Bias and Driver Voltages (Zero Series Impedance, see also Total Device spec) VCC, VC 30 V Total Power Supply and Zener Current (ICC + IZ) 30 mA Output Current, Source or Sink IO 1.0 A Output Energy (Capacitive Load per Cycle) W 5.0 mJ Current Sense, Voltage Feedback, Vref and Rt/Ct Inputs Vin −0.3 to + 5.5 V Compensation Vcomp −0.3 to + 7.2 V Output Vo −0.3 to VCC or VC + 0.3 V Error Amp Output Sink Current IO 10 mA Power Dissipation and Thermal Characteristics D Suffix, Plastic Package, SOIC−14 Case 751A Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air D1 Suffix, Plastic Package, SOIC−8 Case 751 Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air N Suffix, Plastic Package, Case 626 Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air PD RqJA PD RqJA PD RqJA 862 145 702 178 1.25 100 mW °C/W mW °C/W W °C/W Operating Junction Temperature TJ +150 °C Operating Ambient Temperature UC3842B, UC3843B UC2842B, UC2843B UC2843D UC3842BV, UC3843BV TA 0 to 70 −25 to + 85 −40 to +85 −40 to +105 °C Storage Temperature Range Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 4000 V per JEDEC Standard JESD22-A114B Machine Model Method 200 V per JEDEC Standard JESD22-A115-A 2. This device contains latch-up protection and exceeds 100 mA per JEDEC Standard JESD78 |
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