2N3904 datasheet(2/9 Pages) ONSEMI

Part #	2N3904

Description	NPN General - Purpose Amplifier

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Manufacturer	ONSEMI [ON Semiconductor]

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2N3904

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ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.)

Symbol

Parametr

Conditions

Min

Max

Unit

OFF CHARACTERISTICS

V(BR)CEO

Collector−Emitter Breakdown Voltage

IC = 1.0 mA, IB = 0

40

−

V

V(BR)CBO

Collector−Base Breakdown Voltage

IC = 10 mA, IE = 0

60

−

V

V(BR)EBO

Emitter−Base Breakdown Voltage

IE = 10 mA, IC = 0

6.0

−

V

IBL

Base Cutoff Current

VCE = 30 V, VEB = 3 V

−

50

nA

ICEX

Collector Cut−Off Current

VCE = 30 V, VEB = 3 V

−

50

nA

ON CHARACTERISTICS (Note 3)

hFE

DC Current Gain

IC = 0.1 mA, VCE = 1.0 V

40

−

IC = 1.0 mA, VCE = 1.0 V

70

−

IC = 10 mA, VCE = 1.0 V

100

300

IC = 50 mA, VCE = 1.0 V

60

−

IC = 100 mA, VCE = 1.0 V

30

−

VCE(sat)

Collector−Emitter Saturation Voltage

IC = 10 mA, IB = 1.0 mA

−

0.2

V

IC = 50.0 mA, IB = 5.0 mA

−

0.3

VBE(sat)

Base −Emitter Saturation Voltage

IC = 10.0 mA, IB = 1.0 mA

0.65

0.85

V

IC = 50.0 mA, IB = 5.0 mA

−

0.95

SMALL− SIGNAL CHARACTERISTICS

fT

Current−Gain − Bandwidth Product

IC = 10 mA, VCE = 20 V,

f = 100 MHz

300

−

MHz

Cobo

Output Capacitance

VCB = 5.0 V, IE = 0,

f = 100 kHz

−

4.0

pF

Cibo

Input Capacitance

VEB = 0.5 V, IC = 0,

f = 100 kHz

−

8.0

pF

NF

Noise Figure

IC = 100 mA, VCE = 5.0 V,

RS = 1.0 kW,

f = 10 Hz to 15.7 kHz

−

5.0

dB

SWITCHING CHARACTERISTICS

td

Delay Time

VCC = 3.0 V, VBE = 0.5 V,

IC = 10 mA, IB1 = 1.0 mA

−

35

ns

tr

Rise Time

−

35

ns

ts

Storage Time

VCC = 3.0 V, IC = 10 mA,

IB1 = IB2 = 1.0 mA

−

200

ns

tf

Fall Time

−

50

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

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