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2N3904 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N3904 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 9 page © Semiconductor Components Industries, LLC, 2002 July, 2021 − Rev. 2 1 Publication Order Number: 2N3904/D NPN General - Purpose Amplifier 2N3904 Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) (Note 1, Note 2) Symbol Parameter Value Unit VCEO Collector−Emitter Voltage 40 V VCBO Collector−Base Voltage 60 V VEBO Emitter−Base Voltage 6.0 V IC Collector Current − Continuous 200 mA TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed orlow−duty cycle operations. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Max Unit PD Total Device Dissipation 625 mW Derate Above 25°C 5.0 mW/°C RqJC Thermal Resistance, Junction to Case 83.3 °C/W RqJA Thermal Resistance, Junction to Ambient 200 °C/W MARKING DIAGRAM www.onsemi.com See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION 12 3 A/2N 3904 YWW 1: Emitter 2: Base 3: Collector A = Assembly Code 2N3904 = Device Code YWW = Date Code 1 23 1 2 3 TO−92 3 CASE 135AN TO−92 3 LEADFORMED CASE 135AR |
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