VB60170G-E3

www.vishay.com

Vishay General Semiconductor

Revision: 20-Jun-2018

3

Document Number: 89950

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

10

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.1

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

Mounting Pad Layout

0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) min.

0.33 (8.38) min.

0.42 (10.66) min.

12

K

K

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.