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VB60170G-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # VB60170G-E3
Description  Dual High Voltage Trench MOS Barrier Schottky Rectifier
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VB60170G-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

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VB60170G-E3
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jun-2018
2
Document Number: 89950
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB60170G
UNIT
Typical thermal resistance
per diode
RJC
1.0
°C/W
per device
0.7
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VB60170G-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VB60170G-E3/8W
1.38
8W
800/reel
Tape and reel
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
175
Case Temperature (
°C)
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
5
10
15
20
25
30
35
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
0.1
1
10
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward Voltage (V)
T
A = 150 °C
T
A = 25 °C
T
A = 100 °C
T
A = 125 °C
T
A = 175 °C
0.0001
0.001
0.01
0.1
1
10
100
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
T
A = 150 °C
T
A = 125 °C
T
A = 100 °C
T
A = 25 °C
T
A = 175 °C


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