VB60170G-E3

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Vishay General Semiconductor

Revision: 20-Jun-2018

1

Document Number: 89950

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual High Voltage Trench MOS Barrier Schottky Rectifier

DESIGN SUPPORT TOOLS

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 245 °C

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA



Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

Notes

 20 ms

PRIMARY CHARACTERISTICS

2 x 30 A

170 V

210 A

0.72 V

175 °C

Package

Circuit configuration

Common cathode

1

2

K

PIN 1

PIN 2

K

HEATSINK

VB60170G

TMBS

®

click logo to get started

Available

Models

PARAMETER

SYMBOL

VB60170G

UNIT

Maximum repetitive peak reverse voltage

170

V

Maximum average forward rectified current



(fig. 1)

per device

60

A

per diode

30

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load

210

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-40 to +175

°C

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

0.65

-

V

0.78

-

0.87

1.02

0.50

-

0.62

-

0.72

0.80

Reverse current per diode

1.5

-

μA

2.5

-

mA

-

450

μA

5

50

mA