2T1 datasheet(1/1 Pages) AVICTEK

Part #	2T1

Description	SOT-23 Plastic-Encapsulate Transistors

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Manufacturer	AVICTEK [Avic Technology]

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SOT-23 Plastic-Encapsulate Transistors

AV9012LT1

TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

0.3

W (Tamb=25

℃)

Collector current

ICM:

-0.5

A

Collector-base voltage

V(BR)CBO:

-40

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -100

µA, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= -1mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40 V, IE=0

-0.1

µA

Collector cut-off current

ICEO

VCE=-20V, IB=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

µA

hFE(1)

VCE=-1V, IC= -50mA

120

400

DC current gain

hFE(2)

VCE=-1V, IC=-500mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-500 mA, IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500 mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE=-6V, IC= -20mA

f=30MHz

150

MHz

CLASSIFICATION OF

hFE(1)

Rank

L

H

J

Range

120-200

200-350

300-400

DEVICE MARKING

S9012LT1=2T1

Unit: mm

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

Copyright @vic Electronics Corp.

Website http://www.avictek.com

@vic

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