F3L150R07W2H3_B11 datasheet(4/22 Pages) INFINEON

Part #	F3L150R07W2H3_B11

Description	EasyPACK??module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC

Download	22 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

4 / 22 page

Table 4

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min.

Typ.

Max.

Collector-emitter saturation

voltage

VCE sat IC = 150 A, VGE = 15 V

Tvj = 25 °C

1.68

2.00

V

Tvj = 125 °C

1.86

Tvj = 150 °C

1.89

Gate threshold voltage

VGEth

IC = 2.4 mA, VCE = VGE, Tvj = 25 °C

5.05

5.75

6.45

V

Gate charge

QG

VGE = ±15 V, VCE = 400 V

1.6

µC

Internal gate resistor

RGint

Tvj = 25 °C

0

Ω

Input capacitance

Cies

f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V

9.4

nF

Reverse transfer capacitance

Cres

f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V

0.28

nF

Collector-emitter cut-off

current

ICES

VCE = 650 V, VGE = 0 V

Tvj = 25 °C

0.009

mA

Gate-emitter leakage current

IGES

VCE = 650 V, VGE = 0 V, Tvj = 25 °C

100

nA

Turn-on delay time

(inductive load)

tdon

IC = 150 A, VCE = 300 V,

VGE = ±15 V, RGon = 7.5 Ω

Tvj = 25 °C

0.057

µs

Tvj = 125 °C

0.059

Tvj = 150 °C

0.059

Rise time (inductive load)

tr

IC = 150 A, VCE = 300 V,

VGE = ±15 V, RGon = 7.5 Ω

Tvj = 25 °C

0.075

µs

Tvj = 125 °C

0.076

Tvj = 150 °C

0.076

Turn-off delay time

(inductive load)

tdoff

IC = 150 A, VCE = 300 V,

VGE = ±15 V, RGoff = 7.5 Ω

Tvj = 25 °C

0.329

µs

Tvj = 125 °C

0.359

Tvj = 150 °C

0.362

Fall time (inductive load)

tf

IC = 150 A, VCE = 300 V,

VGE = ±15 V, RGoff = 7.5 Ω

Tvj = 25 °C

0.024

µs

Tvj = 125 °C

0.061

Tvj = 150 °C

0.077

Turn-on energy loss per

pulse

Eon

IC = 150 A, VCE = 300 V,

Lσ = 35 nH, VGE = ±15 V,

RGon = 7.5 Ω, di/dt =

1800 A/µs (Tvj = 150 °C)

Tvj = 25 °C

5.77

mJ

Tvj = 125 °C

6.97

Tvj = 150 °C

7.21

Turn-off energy loss per

pulse

Eoff

IC = 150 A, VCE = 300 V,

Lσ = 35 nH, VGE = ±15 V,

RGoff = 7.5 Ω, dv/dt =

3600 V/µs (Tvj = 150 °C)

Tvj = 25 °C

2.53

mJ

Tvj = 125 °C

3.46

Tvj = 150 °C

3.79

Thermal resistance, junction

to heat sink

RthJH

per IGBT

0.771

K/W

Temperature under

switching conditions

Tvj op

-40

150

°C

F3L150R07W2H3_B11

EasyPACK™ module

2 IGBT, T1 / T4

Datasheet

4

Revision 1.00

2021-12-13

Similar Part No. - F3L150R07W2H3_B11

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	F3L150R07W2E3_B11	666Kb / 10P	EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC 2010-04-10 revision:2.0
	F3L150R07W2E3_B11	836Kb / 11P	EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC 2013-11-05 revision:2.1
	F3L150R07W2E3_B11	836Kb / 11P	EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC 2013-11-05 revision:2.1

More results

Similar Description - F3L150R07W2H3_B11

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	F3L100R07W2H3_B11	790Kb / 22P	EasyPACK??module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC Revision 1.00 2021-12-09
	DF200R07W2H3_B77	743Kb / 20P	EasyPACK??2B module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC Revision 1.00 2021-11-15
	DF300R07W2H3_B77	745Kb / 20P	EasyPACK??2B module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC Revision 1.00 2021-11-15
	DF200R12W1H3F_B11	857Kb / 11P	EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC V 3.1 2017-03-31
	FS35R12W1T4_B11	571Kb / 9P	EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC 2010-08-09 revision:2.0
	FS50R12W2T4_B11	637Kb / 9P	EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC 2009-11-12 rev 2.1
	FS75R07W2E3_B11A	529Kb / 9P	EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC revision:3.0 2012-01-27
	FS30R06W1E3_B11	571Kb / 9P	EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC 2010-07-29 revision:2.0
	FS50R06W1E3_B11	568Kb / 9P	EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC 2010-08-09 revision:2.0
	FS75R12W2T4	494Kb / 9P	EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC 2009-10-30 rev 2.3

More results

F3L150R07W2H3_B11 Datasheet(PDF) 4 Page - Infineon Technologies AG

F3L150R07W2H3_B11 Datasheet(HTML) 4 Page - Infineon Technologies AG

Similar Part No. - F3L150R07W2H3_B11

Similar Description - F3L150R07W2H3_B11

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

Datasheet Download

Link URL