 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
TLE9185QXV33 Datasheet(PDF) 104 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
TLE9185QXV33 Datasheet(HTML) 104 Page - Infineon Technologies AG |
|
|
104 / 192 page  TLE9185QXV33 BLDC Driver Supervision Functions Datasheet 104 Rev.1.0 2021-01-21 For Half-Bridges in PWM mode with AFWx = 1: • the blank time of the PWM MOSFET starts at the expiration of the cross-current protection time of the PWM MOSFET. Refer to Figure 53. • the blank time of the free-wheeling MOSFET starts after expiration of the cross-current protection time at turn-off of the PWM MOSFET. Refer to Figure 53. Figure 53 Blank time for half-bridges in PWM operation with AFW = 1 For statically activated half-bridges, the blank time starts: • Case1: at expiration of the cross-current protection (Figure 23), if the opposite MOSFET was previously activated. • Case 2: right after the decoding of the SPI command to turn on a MOSFET, if the half-bridge was in high impedance (Figure 24). The blank times of the active and FW MOSFETs can be configured with the control register CCP_BLK. The typical blank is 587 ns + 266 ns x TBLK[3:0]D). Note: The blank time is implemented at every new activation of a MOSFET, including a recovery from VS undervoltage, VS overvoltage, VSINT overvoltage, CP UV, CP OT. 10.9.1.3 OFF-state diagnostic In order to support the off-state diagnostic (HBxMODE= 11 and CPEN = 1), the gate driver of each MOSFET provides pull-up (IPUDiag) and a pull-down currents (IPDDiag) at the SHx pins. This function requires an activated charge pump. The pull-up current source of a given half-bridge is on when the half-bridge is active: HBxMODE= 01, 10 or 11 and CPEN = 1. The pull-down current of each low-side gate driver is activated by the control bits HBx (HB_ICHG_MAX register). During the off-state diagnostic routine performed by the microcontroller, the drain-source overvoltage threshold of the relevant half-bridges must be set to 2V nominal. Refer to Table 28. Once the routine is finished, it is highly recommended to decrease the drain-source overvoltage threshold to a lower value, avoiding additional current consumption from the VS input. IGS_PWM MOSFET IGS Freewheeling MOSFET ICHGMAXz - ICHGMAXz IPRECHGz - IPREDCHGz ICHGMAXz - IDCHGz ICHGz Post-charge 0 PWM tPDCHGz t t t tHBxCPP tBLANK for PWM MOSFET tBLANK for freewheeling MOSFET tHBxCPP for symmetrisation tHBxCPP tPCHGz |
Similar Part No. - TLE9185QXV33 |
|
Similar Description - TLE9185QXV33 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
