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TLE9185QXV33 Datasheet(PDF) 103 Page - Infineon Technologies AG |
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TLE9185QXV33 Datasheet(HTML) 103 Page - Infineon Technologies AG |
103 / 192 page ![]() TLE9185QXV33 BLDC Driver Supervision Functions Datasheet 103 Rev.1.0 2021-01-21 • After expiration of the blank time . • If the Drain-Source voltage monitoring exceeds the configured threshold for a duration longer than the configured filter time (refer to Table 30 and LS_VDS TFVDS bits). If a short circuit is detected by the Drain-Source voltage monitoring: • The impacted half-bridge is latched off with the static discharge current for the configured cross-current protection time. • The corresponding bit in the status register DSOV is set. • The DSOV bit in Global Status Register GEN_STAT is set. If a Drain-Source overvoltage is detected for one of the MOSFETs, then the status register DSOV must be cleared in order to re-enable the faulty half-bridge. 10.9.1.2 Cross-current protection and drain-source overvoltage blank time All gate drivers feature a cross-current protection time and a Drain-Source overvoltage blank time. The cross-current protection avoids the simultaneous activation of the high-side and the low-side MOSFETs of the same half-bridge. During the blank time, the drain-source overvoltage detection is disabled, to avoid a wrong fault detection during the activation phase of a MOSFET. Note: The setting of the cross-current protection and of the blank times may be changed by the microcontroller only if all HBx_PWM_EN bits are reset. Note: Changing the Drain-Source overvoltage of a half-bridge x (HBx) in on-state (HBxMODE[1:0]=(0,1) or (1,0)) may result in a wrong VDS overvoltage detection on HBx. Therefore it is highly recommended to change this threshold when HBxMODE[1:0]=(0,0) or (1,1) 10.9.1.2.1 Cross-current protection The active and freewheeling cross-current protection times of each half-bridge is configured individually with the control register CCP_BLK. The typical cross-current protection time applied to the freewheeling MOSFET of the half-bridge x is 587 ns + 266 ns x TCCP[3:0]D, where TCCP[3:0]D is the decimal value of the control bits TCCP. 10.9.1.2.2 Drain-source overvoltage blank time A configurable blank time for the Drain-Source monitoring is applied at the turn-on of the MOSFETs. During the blank time, a Drain-Source overvoltage error is masked. Table 30 Drain-Source overvoltage filter time TFVDS[2:0] Drain-Source overvoltage filter time (typical) 00B 0.5 µs (default) 01B 1 µs 10B 2 µs 11B 6 µs |
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