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TLE9185QXV33 Datasheet(PDF) 89 Page - Infineon Technologies AG |
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TLE9185QXV33 Datasheet(HTML) 89 Page - Infineon Technologies AG |
89 / 192 page ![]() Datasheet 89 Rev. 1.0 2021-01-21 TLE9185QXV33 BLDC Driver Gate Drivers Digital PWMx Inputs High Level Input Voltage Threshold VPWMH ––0.7 × Vcc1 V– P_12.11.44 Low Level Input Voltage Threshold VPWML 0.3 × Vcc1 –– V – P_12.11.45 PWMx Input Hysteresis VPWM,hys – 0.12 × Vcc1 –V 1) P_12.11.46 PWMx Pull-down Resistance RPD_PWM 20 40 80 kΩ – P_12.11.47 CRC Select; Pin PWM1/CRC Config Pull-up Resistance RCFG 100 kΩ 12) P_12.11.63 Config Select Filter Time tCFG_F 510 14 µs 1) P_12.11.66 1) Not subject to production test, specified by design. 2) Independent from CPSTGA. 3) ICP = -12 mA for VS ≥ 8V, ICP = 6mA for VS = 6V. 4) VGS(ON) = VGS(ON)1 if FET_LVL = 1, VGS(ON) = VGS(ON)2 if FET_LVL = 0. 5) Tj reference = 25°C 6) Valid for VS = 8 to 19 V, VS reference = 13.5 V 7) This resistance is the resistance between GHx and GND connected through a diode to SHx. As a consequence, the voltage at SHx can rise up to 0.6 V typ. before it is discharged through the resistor. 8) Not subject to production test, specified by design. 9) External PWM signal. 10) Parameter dependent on the capacitance CCP. 11) CCPC1 = CCPC2 = 220 nF, CCP = 470 nF. Other CCP values higher than 470 nF can be used. Note that this capacitor influences the charge pump rise and turn-on times, and the charge , VCP ripple voltage when charging the gate of a MOSFET. 12) Config Pull-up will be only active during startup-phase for checking external pull-down. After checking, the typ. 40 kΩ Pull-down resistance will be present. Table 26 Electrical characteristics: gate drivers (cont’d) VSINT = 5.5 V to 28 V, Tj = -40°C to +150°C, VCP > VS+ 8.5 V, VS= 6 to 19V, all voltages with respect to ground, positive current flowing into pin except for IGLx and IGHx(unless otherwise specified). Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. |
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