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TLE9185QXV33 Datasheet(PDF) 85 Page - Infineon Technologies AG |
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TLE9185QXV33 Datasheet(HTML) 85 Page - Infineon Technologies AG |
85 / 192 page Datasheet 85 Rev. 1.0 2021-01-21 TLE9185QXV33 BLDC Driver Gate Drivers Gate Driver turn-on delay Time tDGDRV_ON1 – – 400 ns 8) From PWM9) rising edge to 20% of ICHGx , x = 0 to 63, CLoad = 10 nF, BDFREQ = 0 P_12.11.25 Gate Driver turn-on delay Time tDGDRV_ON2 – – 300 ns 8) From PWM9) rising edge to 20% of ICHGx , x = 0 to 63, CLoad = 10 nF, BDFREQ = 1 P_12.11.93 Gate Driver current turn-on rise time tGDRV_RISE(ON) –30 50 ns 8) From 20% of ICHGx to ICHGx , x = 0 to 63, CLoad = 10 nF P_12.11.26 Gate Driver turn-off delay Time tDGDRV_OFF1 – – 400 ns 8) From PWM9) rising edge to 20% of IDCHGx , x = 0 to 63, CLoad = 10 nF, BDFREQ = 0 P_12.11.27 Gate Driver turn-off delay Time tDGDRV_OFF2 – – 300 ns 8) From PWM9) rising edge to 20% of IDCHGx , x = 0 to 63, CLoad = 10 nF, BDFREQ = 1 P_12.11.94 Gate Driver current turn-off rise time tGDRV_RISE(OFF ) –30 50 ns 8) From 20% of IDCHGx to IDCHGx, x = 0 to 63, CLoad = 10 nF P_12.11.28 External MOSFET gate-to- source voltage - ON VGS(ON)1 7– – V 1) VS ≥ 8 V, FET_LVL=1 P_12.11.29 External MOSFET gate-to- source voltage - ON VGS(ON)1 7– – V 1) VS ≥ 8 V, FET_LVL=1 P_12.11.102 External MOSFET gate-to- source voltage - ON VGS(ON)2 5.5 – – V 1) VS ≥ 8 V, FET_LVL=0 P_12.11.103 External MOSFET gate-to- source voltage - OFF VGS(OFF)1 ––1.5 V 1) IDCHGx ≤ 24D(≤ 41 mA typ.) P_12.11.30 Table 26 Electrical characteristics: gate drivers (cont’d) VSINT = 5.5 V to 28 V, Tj = -40°C to +150°C, VCP > VS+ 8.5 V, VS= 6 to 19V, all voltages with respect to ground, positive current flowing into pin except for IGLx and IGHx(unless otherwise specified). Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. |
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