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TLE9185QXV33 Datasheet(PDF) 52 Page - Infineon Technologies AG

Part # TLE9185QXV33
Description  BLDC Driver
Download  192 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE9185QXV33 Datasheet(HTML) 52 Page - Infineon Technologies AG

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Datasheet
52
Rev. 1.0
2021-01-21
TLE9185QXV33
BLDC Driver
Gate Drivers
9.3.3
PWM operation with 3 PWM inputs
Each half bridge are controlled by one input if PWM_NB = 0 (see CSA) and HBx_PWM_EN (see HBMODE):
• PWM1/CRC controls HB1
•PWM3 controls HB2
•PWM5 controls HB3
tHBxBLANK FW
Freewheeling drain-source overvoltage blank time of HBx. See control register and
CCP_BLK.
PWMz
External PWM signal applied to the input pin PWMz.
ICHGMAXx
Maximum drive current of the half-bridge x during the pre-charge and pre-discharge
phases. See control register HB_ICHG_MAX.
IPRECHGx and IPREDCHGx are limited to ICHGMAXx.
IPRECHGx
Pre-charge current sourced by the gate driver to the active MOSFET of the half-bridge
x during tPCHGx (TPRECHG).
Internal and self-adaptive parameter (if AGC[1:0] = (1,0) or (1,1), GENCTRL).
IPRECHGx is clamped between ICHG0 (0.5 mA typ.) and ICHGMAXx.
IPCHGINITx
Initial value of IPRECHGx. Refer to HB_PCHG_INIT.
IPREDCHGx
Pre-discharge-current sunk by the gate driver mapped to the half-bridge x during
tPDCHGx.
Internal and self-adaptive parameter (if AGC[1:0] = (1,0) or (1,1), GENCTRL).
IPREDCHGx is clamped between IDCHG0 (0.5 mA typ.) and ICHGMAXx.
IPDCHGINITx
Initial value of IPREDCHGx. Refer to HB_PCHG_INIT.
ICHGx
Current sourced by the gate driver to the active MOSFET of the half-bridge x during the
charge phase. See control register HB_ICHG.
IDCHGx
Current sunk by the gate driver to turn-off the active MOSFET of the half-bridge x
during the discharge phase. See control register HB_ICHG.
ICHGFWx
Current sourced or sunk by the gate driver to turn on / turn off the freewheeling
MOSFET of the half-bridge x . See control register HB_ICHG.
tPCHGx
Duration of the pre-charge phase of half-bridge x.
tPCHGx is configurable by SPI. See control register TPRECHG.
tPDCHGx
Duration of the pre-discharge phase of half-bridge x.
tPDCHGx is configurable by SPI. See control register TPRECHG.
tDONx
Turn-on delay of the active MOSFET of HBx.
tDOFFx
Turn-off delay of the active MOSFET of HBx.
IHOLD
Hold current sourced or sunk by the gate driver to keep the MOSFET in the desired
state. See IHOLD control bit in GENCTRL.
IHARDOFF
IHARDOFF is the maximum current that the gate drivers can sink. It corresponds to the
discharge current when IDCHGx[5:0] = 63D (150 mA typ.).
TFVDS
Drain-Source overvoltage filter time. See LS_VDS.
Table 18
Abbreviations for adaptive turn-on and turn-off phases in PWM configuration (cont’d)
Abbreviation
Definition


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