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TLE9185QXV33 Datasheet(PDF) 52 Page - Infineon Technologies AG |
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TLE9185QXV33 Datasheet(HTML) 52 Page - Infineon Technologies AG |
52 / 192 page Datasheet 52 Rev. 1.0 2021-01-21 TLE9185QXV33 BLDC Driver Gate Drivers 9.3.3 PWM operation with 3 PWM inputs Each half bridge are controlled by one input if PWM_NB = 0 (see CSA) and HBx_PWM_EN (see HBMODE): • PWM1/CRC controls HB1 •PWM3 controls HB2 •PWM5 controls HB3 tHBxBLANK FW Freewheeling drain-source overvoltage blank time of HBx. See control register and CCP_BLK. PWMz External PWM signal applied to the input pin PWMz. ICHGMAXx Maximum drive current of the half-bridge x during the pre-charge and pre-discharge phases. See control register HB_ICHG_MAX. IPRECHGx and IPREDCHGx are limited to ICHGMAXx. IPRECHGx Pre-charge current sourced by the gate driver to the active MOSFET of the half-bridge x during tPCHGx (TPRECHG). Internal and self-adaptive parameter (if AGC[1:0] = (1,0) or (1,1), GENCTRL). IPRECHGx is clamped between ICHG0 (0.5 mA typ.) and ICHGMAXx. IPCHGINITx Initial value of IPRECHGx. Refer to HB_PCHG_INIT. IPREDCHGx Pre-discharge-current sunk by the gate driver mapped to the half-bridge x during tPDCHGx. Internal and self-adaptive parameter (if AGC[1:0] = (1,0) or (1,1), GENCTRL). IPREDCHGx is clamped between IDCHG0 (0.5 mA typ.) and ICHGMAXx. IPDCHGINITx Initial value of IPREDCHGx. Refer to HB_PCHG_INIT. ICHGx Current sourced by the gate driver to the active MOSFET of the half-bridge x during the charge phase. See control register HB_ICHG. IDCHGx Current sunk by the gate driver to turn-off the active MOSFET of the half-bridge x during the discharge phase. See control register HB_ICHG. ICHGFWx Current sourced or sunk by the gate driver to turn on / turn off the freewheeling MOSFET of the half-bridge x . See control register HB_ICHG. tPCHGx Duration of the pre-charge phase of half-bridge x. tPCHGx is configurable by SPI. See control register TPRECHG. tPDCHGx Duration of the pre-discharge phase of half-bridge x. tPDCHGx is configurable by SPI. See control register TPRECHG. tDONx Turn-on delay of the active MOSFET of HBx. tDOFFx Turn-off delay of the active MOSFET of HBx. IHOLD Hold current sourced or sunk by the gate driver to keep the MOSFET in the desired state. See IHOLD control bit in GENCTRL. IHARDOFF IHARDOFF is the maximum current that the gate drivers can sink. It corresponds to the discharge current when IDCHGx[5:0] = 63D (150 mA typ.). TFVDS Drain-Source overvoltage filter time. See LS_VDS. Table 18 Abbreviations for adaptive turn-on and turn-off phases in PWM configuration (cont’d) Abbreviation Definition |
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