A42 datasheet(1/3 Pages) JIANGSU

Part #	A42

Description	TRANSISTOR竊?NPN 竊

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

A42

TRANSISTOR（ NPN ）

FEATURES

Power dissipation

PCM :

0.625

W（Tamb=25℃）

Collector current

ICM

:

0.5

A

Collector-base voltage

V(BR)CBO : 300

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100μA， IE=0

300

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1 mA， IB=0

300

V

Emitter-base breakdown voltage

V(BR)EBO

IE=

100μA， IC=0

5

V

Collector cut-off current

ICBO

VCB= 200 V

IE=0

0.25

μA

Emitter cut-off current

IEBO

VEB=

5

V， IC=0

0.1

μA

hFE（1）

VCE= 10 V,

IC= 1 mA

60

hFE（2）

VCE= 10V, IC = 10 mA

80

250

DC current gain

HFE（3）

VCE= 10 V,

IC=30 mA

75

Collector-emitter saturation voltage

VCE(sat)

IC= 20 mA,

IB= 2 m A

0.2

V

Base-emitter saturation voltage

VBE(sat)

IC= 20m A,

IB= 2 mA

0.9

V

Transition frequency

fT

VCE=20 V,

IC= 10 mA

f =30MHz

50

MHz

CLASSIFICATION OF hFE(2)

Rank

A

B1

B2

C

Range

80-100

100-150

150-200

200-250

1 2 3

TO—92

1.EMITTER

2.BASE

3.COLLECTOR

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