Photo Transistor

MTD8060N

Features

High Reliability in Demading Enviroments

Metal Can Package

Applications

Smoke Detectors

Optical Sensors

Optical Switches

Edge Sensing

Maximum Ratings (Ta=25

o

C)

Characteristic

Symbol

Max.

Test

Condition

Unit

Collector Power

Dissipation

250

−

mW

Collector−Emitter

Voltage

30

−

V

Emitter−Collector

Voltage

5

−

V

Collector Current

50

−

mA

Operating Temperature

−30 ~

+100

−

o

C

Storage Temperature

−40 ~

+125

−

o

C

Junction Temperature

125

−

o

C

Soldering Temperature

260

for 5 sec. max

o

C

Opto−Electrical Characteristics (Ta=25

o

C)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

C−E Saturation Voltage

VCE(sat)

Ic=0.2mA,Ee=5mW/cm2*

−

.20

−

µA

Light Current

Vce=20V, Ee=0.5mW/cm2*

−

3.00

−

µA

Dark Current

Vce=20V, Ee=0.5mW/cm2*

−

−

100

nA

Spectral Sensitivity

λ

−

−

400~1100

−

µA

Peak Sensitivity Wavelength

λp

−

−

880

−

V

Beam Angle

θ

−

−

± 12

o

−

deg.

Rise Time

RL=100,Vce=5V,Ic=0.5mA

−

10.00

−

ns

Fall Time

RL=100,Vce=5V,Ic=0.5mA

−

10.00

−

ns

*Color Temperature=2870ºK Standard Tungston Lamp

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Fax: 518.785.4725

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