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IRFP450APBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRFP450APBF Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 11 page  IRFP450A www.vishay.com Vishay Siliconix S22-0058-Rev. B, 31-Jan-2022 2 Document Number: 91230 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.65 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.58 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.40 Ω Forward Transconductance gfs VDS = 50 V, ID = 8.4 Ab 7.8 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2038 - pF Output Capacitance Coss -307 - Reverse Transfer Capacitance Crss -10 - Output Capacitance Coss VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz 2859 Output Capacitance Coss VGS = 0 V; VDS = 400 V, f = 1.0 MHz 81 Effective Output Capacitance Coss eff. VGS = 0 V; VDS = 0 V to 400 Vc 96 Total Gate Charge Qg VGS = 10 V ID = 14 A, VDS = 400 V, see fig. 6 and 13b -- 64 nC Gate-Source Charge Qgs -- 16 Gate-Drain Charge Qgd -- 26 Turn-On Delay Time td(on) VDD = 250 V, ID = 14 A, RG = 6.2 Ω, RD = 17 Ω, see fig. 10b -15 - ns Rise Time tr -36 - Turn-Off Delay Time td(off) -35 - Fall Time tf -29 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 14 A Pulsed Diode Forward Currenta ISM -- 56 Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb -- 1.4 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μsb - 487 731 ns Body Diode Reverse Recovery Charge Qrr -3.9 5.8 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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