IRFP450A

www.vishay.com

Vishay Siliconix

S22-0058-Rev. B, 31-Jan-2022

1

Document Number: 91230

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

• Material categorization: for definitions of compliance

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge, Full Bridge

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

PRODUCT SUMMARY

500

0.40

64

16

26

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP450APbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

14

A

8.7

56

Linear Derating Factor

1.5

W/°C

760

mJ

14

A

19

mJ

Maximum Power Dissipation

190

W

dV/dt

4.1

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

For 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m