SI7423DN_V01 datasheet(3/12 Pages) VISHAY

Part #	SI7423DN

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 72582

S-83051-Rev. C, 29-Dec-08

www.vishay.com

3

Vishay Siliconix

Si7423DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0

5

10

15

20

25

30

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

VDS = 15 V

ID = 11.7 A

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

50

10

1

TJ = 150 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

0

5

10

15

20

25

30

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 11.7 A

TJ - Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0

2468

10

VGS - Gate-to-Source Voltage (V)

ID = 11.7 A

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SI7423DN Datasheet(PDF) 3 Page - Vishay Siliconix

SI7423DN Datasheet(HTML) 3 Page - Vishay Siliconix

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