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SI7423DN Datasheet(PDF) 4 Page - Vishay Siliconix

Part # SI7423DN
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7423DN Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number: 72582
S-83051-Rev. C, 29-Dec-08
Vishay Siliconix
Si7423DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.4
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0.01
0
1
40
50
10
600
Time (s)
30
20
0.1
10
100
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
1
0.1
1
10
100
0.01
10
TA = 25 °C
Single Pulse
0.1
IDM Limited
ID(on)
Limited
Limited by RDS(on)*
BVDSS Limited
P(t) = 10
DC
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 -3
10 -2
1
10
600
10 -1
10 -4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM


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