Power MOS FET

767

11

■General Description

■Features

■Pin Configuration

■Equivalent Circuit

■Absolute Maximum Ratings

■Pin Assignment

■Applications

１

２

３

４

５

６

７

８

S1

G1

S2

G2

D1

D1

D2

D2

SOP-8

(TOP VIEW)

PIN

NUMBER

PIN

NAME

FUNCTION

1

3

2

S1

S2

G1

Source

Source

Gate

4

7~8

5~6

G2

D1

D2

Gate

Drain

Drain

NN-Channel Power MOS FET

NDMOS Structure

NLow On-State Resistance : 0.03Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

NTwo FET Devices Built-in

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

The XP133A1330SR is an N-Channel Power MOS FET with low on-

state resistance and ultra high-speed switching characteristics.

Two FET devices are built into the one package.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

The small SOP-8 package makes high density mounting possible.

Low on-state resistance : Rds (on) = 0.03

Ω ( Vgs = 4.5V )

: Rds (on) = 0.04

Ω ( Vgs = 2.5V )

: Rds (on) = 0.07

Ω ( Vgs = 1.5V )

Ultra high-speed switching

Operational Voltage

: 1.5V

High density mounting : SOP-8

１

２

３

４

５

６

７

８

N-Channel MOS FET

( 2 FET devices built-in )

SYMBOL

RATINGS

UNITS

Vdss

20

V

Vgss

+ 8

V

Id

6

A

Idp

20

A

Idr

6

A

Pd

2

W

Tch

150

O

C

Tstg

- 55 ~ 150

O

C

( note ) : When implemented on a glass epoxy PCB

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Storage Temperature

Reverse Drain Current

Continuous Channel

Power Dissipation (note)

Channel Temperature

11S_21XP133A1330SR 02.9.12 4:01 PM ページ 767