Power MOS FET

711

11

Power MOS FET

■General Description

■Features

■Pin Configuration

■Equivalent Circuit

■Absolute Maximum Ratings

■Pin Assignment

■Applications

１

２

３

４

５

６

７

８

S

S

S

G

D

D

D

D

SOP-8

（TOP VIEW）

PIN NUMBER

PIN NAME

FUNCTION

1∼ 3

Ｓ

Source

4

Ｇ

Gate

5∼ 8

Ｄ

Drain

１

２

３

４

５

６

７

８

N-Channel MOS FET

( 1 device built-in )

SYMBOL

RATINGS

UNITS

Vdss

20

V

Vgss

+ 8

V

Id

10

A

Idp

40

A

Idr

10

A

Pd

2.5

W

Tch

150

O

C

Tstg

-55 ~ 150

O

C

( note ) : When implemented on a glass epoxy PCB

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Storage Temperature

Reverse Drain Current

Continuous Channel

Power Dissipation (note)

Channel Temperature

NN-Channel Power MOS FET

NDMOS Structure

NLow On-State Resistance : 0.012 Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

The XP131A1715SR is an N-Channel Power MOS FET with low on-

state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

The small SOP-8 package makes high density mounting possible.

Low on-state resistance : Rds (on) = 0.012

Ω ( Vgs = 4.5V )

: Rds (on) = 0.015

Ω ( Vgs = 2.5V )

: Rds (on) = 0.025

Ω ( Vgs = 1.5V )

Ultra high-speed switching

Operational Voltage

: 1.5V

High density mounting : SOP-8

11S_07XP131A1715SR 02.9.12 3:51 PM ページ 711