Power MOS FET

723

11

The XP131A0526SR is an N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

The small SOP-8 package makes high density mounting possible.

Low on-state resistance : Rds(on)=0.017

Ω (Vgs=10V)

: Rds(on)=0.026

Ω (Vgs=4.5V)

Ultra high-speed switching

Operational Voltage

: 4.5V

High density mounting : SOP-8

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NN-Channel Power MOS FET

NDMOS Structure

NLow On-State Resistance: 0.026Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

1

2

3

4

8

7

6

5

SOP-8

(TOP VIEW)

SD

Ｓ

D

SD

GD

1

2

3

4

8

7

6

5

N-Channel MOS FET

(1 device built-in)

PIN NUMBER

PIN NAME

FUNCTION

1∼ 3

Ｓ

Source

4

Ｇ

Gate

5∼ 8

Ｄ

Drain

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Power Dissipation (note)

Channel Temperature

Storage Temperature

Vdss

Vgss

Id

Idp

Idr

Pd

Tch

Tstg

30

±20

10

30

10

2.5

150

-55~150

V

V

A

A

A

W

°C

°C

SYMBOL

RATINGS

UNITS

Ta=25

°C

When implemented on a glass epoxy PCB

Note:

■General Description

■Features

■Pin Configuration

■Equivalent Circuit

■Absolute Maximum Ratings

■Pin Assignment

■Applications

11S_10XP131A0526SR 02.9.12 3:53 PM ページ 723