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XP131A0232SR Datasheet(PDF) 4 Page - Torex Semiconductor |
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XP131A0232SR Datasheet(HTML) 4 Page - Torex Semiconductor |
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4 / 4 page  XP131A0232SR 722 11 10000 100 1000 0 5 10 15 20 Ciss Coss Crss CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz Drain-Source Voltage:Vds (V) 1000 1 100 10 0.1 1 10 tf td（off） td（on）,tr SWITCHING TIME vs. DRAIN CURRENT Vgs=5V, Vdd ≒10V, PW=10 µsec. duty≤1% Drain Current:Id (A) 5 4 3 2 1 0 0 102030 GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=8A Gate Charge:Qg (nc) 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 2.5V 1.5V 0,-4.5V Vgs＝4.5V REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test Source-Drain Voltage:Vsd (V) 10 0.0001 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 Single Pulse STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB) Pulse Width:PW (sec) 11S_09XP131A0232SR 02.9.12 3:52 PM ページ 722 |
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