XP131A0232SR datasheet(2/4 Pages) TOREX

Part #	XP131A0232SR

Description	N-Channel Power MOS FET

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Manufacturer	TOREX [Torex Semiconductor]

Direct Link	http://www.torex.co.jp

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XP131A0232SR

720

11

■Electrical Characteristics

DC Characteristics

Ta=25

°C

PARAMETER

UNITS

Gate-Source Cut-off Voltage

Vgs(off)

0.5

V

0.045

0.035

Id=4A, Vgs=2.5V

Ω

0.08

0.055

Id=4A, Vgs=1.5V

Ω

Gate-Source Leakage Current

Igss

µA

±10

Forward Transfer Admittance

(note)

18S

Body Drain Diode

Forward Voltage

0.85

1.1

V

Drain Cut-off Current

Idss

10

µA

Vf

Vds=20V, Vgs=0V

Id=1mA, Vds=10V

Id=4A, Vds=10V

If=8A, Vgs=0V

Vgs=

±8V, Vds=0V

Drain-Source On-state

Resistance (note)

Rds(on)

Ω

Id=4A, Vgs=4.5V

0.025

0.032

SYMBOL

CONDITIONS

MAX

MIN

TYP

PARAMETER

UNITS

Feedback Capacitance

Crss

pF

Output Capacitance

Coss

pF

Input Capacitance

Ciss

180

550

1200

pF

Vds=10V, Vgs=0V

f=1MHz

SYMBOL

CONDITIONS

MAX

MIN

TYP

Dynamic Characteristics

Ta=25

°C

Effective during pulse test.

Note:

Yfs

PARAMETER

UNITS

Fall Time

tf

ns

Rise Time

tr

ns

Turn-on Delay Time

td (on)

10

Turn-off Delay Time

td (off)

ns

80

15

15ns

Vgs=5V, Id=4A

Vdd=10V

SYMBOL

CONDITIONS

MAX

MIN

TYP

Switching Characteristics

Ta=25

°C

PARAMETER

UNITS

Rth (ch-a)

Thermal Resistance

(channel-ambience)

50

˚C/W

Implement on a glass epoxy

resin PCB

SYMBOL

CONDITIONS

MAX

MIN

TYP

Thermal Characteristics

11S_09XP131A0232SR 02.9.12 3:52 PM ページ 720

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