GaAs, pHEMT, Low Noise Amplifier,

400 MHz to 52 GHz

Data Sheet

HMC1126ACEZ

Rev. 0

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FEATURES

Gain: 12 dB typical at 10 GHz to 26 GHz

Input return loss: 14 dB typical at 10 GHz to 26 GHz

Output return loss: 16 dB typical at 10 GHz to 40 GHz

OP1dB: 17.5 dB typical at 10 GHz to 26 GHz

OIP3: 28.5 dBm typical at 10 GHz to 26 GHz

Noise figure: 3.5 dB typical at 10 GHz to 26 GHz

5 V supply voltage at 85 mA

50 Ω matched input and output

No external passive components required

5.00 mm × 5.00 mm, 24-terminal LGA_CAV package

APPLICATIONS

Test instrumentation

Military and space

FUNCTIONAL BLOCK DIAGRAM

2

1

3

4

5

6

18

17

16

15

14

13

GND

GND

RFIN

GND

GND

GND

GND

GND

GND

RFOUT

GND

GND

Figure 1.

GENERAL DESCRIPTION

The HMC1126ACEZ is a gallium arsenide (GaAs),

pseudomorphic high electron mobility transfer (pHEMT), low

noise amplifier that operates from 400 MHz to 52 GHz. The

HMC1126ACEZ provides 12 dB of typical gain, 28.5 dBm typical

output third-order intercept (OIP3), 17.5 dBm typical output

power at 1 dB gain compression (OP1dB), and a 3.5 dB typical

noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ

requires 85 mA from a 5 V supply. All of the typically required

external passive components for operation (ac coupling capacitors

and power supply decoupling capacitors) are integrated, which

facilitates a small and compact printed circuit board (PCB)

footprint.

The HMC1126ACEZ is housed in a 5.00 mm × 5.00 mm,

24-terminal chip array small outline no lead cavity (LGA_CAV)

package.