HMC1126ACEZ datasheet(7/21 Pages) AD

Part #	HMC1126ACEZ

Description	GaAs, pHEMT, Low Noise Amplifier, 400 MHz to 52 GHz

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Data Sheet

HMC1126ACEZ

Rev. 0 | Page 7 of 21

TYPICAL PERFORMANCE CHARACTERISTICS

IDQ is the drain current without the RF signal applied, and IDD is the drain current with the RF signal applied.

15

–20

–15

5

–5

–10

10

0

0.25

2.00

1.75

1.00

1.50

0.75

1.25

0.50

FREQUENCY (GHz)

S22

S21

S11

Figure 8. Low Frequency Gain and Return Loss vs. Frequency, VDD = 5 V,

IDQ = 85 mA, VGG2 = 1 V (S22 Is the Output Return Loss, S21 Is the Gain, and

S11 Is the Input Return Loss)

16

0

4

12

8

2

6

14

10

2

52

47

32

17

42

27

12

37

22

7

FREQUENCY (GHz)

+85°C

+25°C

–40°C

Figure 9.Gain vs. Frequency at Various Temperatures,

VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V

0

–20

–15

–5

–10

2

52

47

32

17

42

27

12

37

22

7

FREQUENCY (GHz)

+85°C

+25°C

–40°C

Figure 10. Input Return Loss vs. Frequency at Various Temperatures,

VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V

15

–25

–20

–15

5

–5

–10

10

0

65

60

40

20

55

35

15

50

30

10

45

25

5

FREQUENCY (GHz)

S22

S21

S11

Figure 11. Gain and Return Loss vs. Frequency,

VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V

0

–25

–15

–5

–20

–10

2

52

47

32

17

42

27

12

37

22

7

FREQUENCY (GHz)

+85°C

+25°C

–40°C

Figure 12. Output Return Loss vs. Frequency at Various Temperatures,

VDD = 5 V, IDQ = 85 mA, VGG2 = 1 V

16

0

4

12

8

2

6

14

10

2

52

47

32

17

42

27

12

37

22

7

FREQUENCY (GHz)

5.0V

4.0V

3.3V

Figure 13. Gain vs. Frequency at Various VDD Voltages,

IDQ = 85 mA, VGG2 = 1 V

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