A3I20X050N A3I20X050GN

1

RF Device Data

NXP Semiconductors

RF LDMOS Wideband Integrated

Power Amplifiers

The A3I20X050N integrated Doherty circuit is designed with on--chip

matching that makes it usable from 1800 to 2200 MHz. This multi--stage

structure is rated for 20 to 32 V operation and covers all typical cellular base

station modulation formats.

1800 MHz

 Typical Doherty Single--Carrier W--CDMA Characterization Performance:

Frequency

(dB)

PAE

(%)

ACPR

(dBc)

1805 MHz

28.7

38.1

–37.1

1840 MHz

28.7

39.1

–39.7

1880 MHz

28.7

39.0

–37.5

1800–2200 MHz

Frequency

(dB)

PAE

(%)

ACPR

(dBc)

1800 MHz

28.3

37.3

–33.5

1900 MHz

28.4

38.0

–37.7

2000 MHz

28.7

37.6

–40.9

2100 MHz

29.0

38.0

–39.1

2200 MHz

29.0

37.6

–34.1

1. All data measured in fixture with device soldered to heatsink.

Features

 Integrated Doherty splitter and combiner

 On--chip matching (50 ohm input, DC blocked)

 Integrated quiescent current temperature compensation with

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current

Document Number: A3I20X050N

Rev. 2, 05/2020

NXP Semiconductors

Technical Data

1800–2200 MHz, 6.3 W Avg., 28 V

AIRFAST RF LDMOS

INTEGRATED POWER AMPLIFIERS

A3I20X050N

A3I20X050GN

OM--400--8

PLASTIC

A3I20X050N

OM--400G--8

PLASTIC

A3I20X050GN

 2019–2020 NXP B.V.