A3I20X050N A3I20X050GN

5

RF Device Data

NXP Semiconductors

A3l20X050N

D122782

C7

C11

C12

C14 C16

C13

C15

R2

R1

C17

R3

R4

C8

C9

C18

C19

C21

C4

C10

C5

C6

C26

C25

C1

C2

C3

cut out

area

Rev. 4

C24

Q1

C20

C22

C23

Note: All data measured in fixture with device soldered to heatsink. Production fixture does not

include device soldered to heatsink.

Figure 3. A3I20X050N Characterization Test Circuit Component Layout — 1805–1880 MHz

aaa-035328

Table 7. A3I20X050N Characterization Test Circuit Component Designations and Values — 1805–1880 MHz

Part

Description

Part Number

Manufacturer

C1, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12

10 F Chip Capacitor

C3225X7S1H106M250AB

TDK

C13, C14

10 nF Chip Capacitor

C0805C103K5RAC

Kemet

C15, C16, C17, C18, C19, C20, C21, C22, C23

10 pF Chip Capacitor

600S100JT250XT

ATC

C24

150 F, 100 V Electrolytic Capacitor

EEVFK2A151M

Panasonic

C25, 26

220 F, 100 V Electrolytic Capacitor

EEVFK2A221M

Panasonic

Q1

RF Power LDMOS Amplifier

A3I20X050N

NXP

R1, R2

2.2 k, 1/8 W Chip Resistor

CRCW08052K20JNEA

Vishay

R3, R4

10 , 1/8 W Chip Resistor

CRCW080510R0FKEA

Vishay

PCB

D122782

MTL