4

RF Device Data

NXP Semiconductors

A3I20X050N A3I20X050GN

Characteristic

Symbol

Min

Typ

Max

Unit

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHz Offset.

Power Gain

28.0

29.3

31.0

dB

Power Added Efficiency

PAE

36.7

39.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–37.2

–33.0

dBc

P3dB

57.5

63.1

—

W

f = 1840 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR

ISBW < 120 MHz

No Device Degradation

ISBW > 120 MHz

1805–1880 MHz Bandwidth

P3dB

—

63.0

—

W

AM/PM

(Maximum value measured at the P3dB compression point across

the 1805–1880 MHz frequency range.)



—

–19

—



VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

—

190

—

MHz

with2k Gate Feed Resistors (–30 to 85C) Stage 1+2 (Carrier)

—

6.5

—

%

—

0.3

—

dB

Gain Variation over Temperature

(–40Cto+85C)

G

—

0.037

—

dB/C

Output Power Variation over Temperature

(–40Cto+85C)

P3dB

—

0.009

—

dB/C

Table 6. Ordering Information

Device

Tape and Reel Information

Package

A3I20X050NR1

R1 Suffix = 500 Units, 32 mm Tape Width, 13--inch Reel

OM--400--8

A3I20X050GNR1

OM--400G--8

1. Part internally input and output matched.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

3. All data measured in fixture with device soldered to heatsink.

where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

5. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control